| 发明名称 |
Laser spike annealing using fiber lasers |
| 摘要 |
The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a region of the wafer to a pre-anneal temperature TPA; and scanning the elongate annealing image over the wafer surface and within the pre-heat region so that the annealing image has a dwell time tD in the range 30 ns≦tD≦10 ms and raises the wafer surface temperature to an annealing temperature TA. |
| 申请公布号 |
US2015179449(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414497006 |
申请日期 |
2014.09.25 |
| 申请人 |
Ultratech, Inc. |
发明人 |
Anikitchev Serguei |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of performing laser spike annealing of a surface of a wafer, comprising:
generating with a plurality of fiber laser systems respective continuous-wave (CW) output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a region of the wafer to a pre-anneal temperature TPA to define a pre-heat region; and scanning the elongate annealing image over the wafer surface and at least partially within the pre-heat region in a direction substantially perpendicular to the long axis so that the annealing image has a dwell time tD in the range 30 ns≦tD≦10 ms and raises the wafer surface temperature to an annealing temperature TA. |
| 地址 |
San Jose CA US |
