ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An electronic device including a semiconductor memory is provided, wherein the semiconductor memory comprises: a substrate in which first to third regions are provided; first to third trenches formed in the first to third regions, respectively, and having a different line width from each other; and first to third device isolation layers formed in the first to third trenches, respectively, wherein the first device isolation layer includes a stack structure of a first insulation layer and a second insulation layer, the second device isolation layer includes the first insulation layer formed over a part of a bottom and one sidewall of the second trench, the second insulation layer having a stepped type and a third insulation layer which is formed over the second insulation layer, and the third device isolation layer includes a stack structure of the first to third insulation layers.

主权项

1. An electronic device including a semiconductor memory, wherein the semiconductor memory comprises:
a substrate having a first region, a second region and a third region adjacent to one another, wherein the second region is located between, and isolates, the first and third regions; first, second and third trenches formed in the first, second and third regions, respectively, each having a different line width; and first, second and third device isolation layers formed in each of the first, second and third trenches, wherein the first device isolation layer includes a first stack structure including a first insulation layer and a second insulation layer, wherein the second device isolation layer in the second trench includes a first insulation layer formed over a part of a bottom and one sidewall of the second trench, a second insulation layer formed over the first insulation layer and a third insulation layer formed over the second insulation layer and surfaces of the second trench not covered by the first insulation layer to have a stepped type structure, and wherein the third device isolation layer in the third trench includes a first insulation layer formed over surfaces of the third trench, a second insulation layer formed over the first insulation layer and a third insulation layer formed over the second insulation layer.