发明名称 |
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS |
摘要 |
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed. |
申请公布号 |
WO2015094648(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2014US68210 |
申请日期 |
2014.12.02 |
申请人 |
INTEL CORPORATION |
发明人 |
STEIGERWALD, JOSEPH M.;GHANI, TAHIR;HU, JENNY;POST, IAN R.C. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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