THIN FILM TRANSISOTR

摘要

The present invention relates to a thin film transistor capable of reducing a voltage between a source electrode and a drain electrode. The thin film transistor according to an embodiment of the present invention includes a gate electrode, a semiconductor pattern which is formed on the gate electrode and is made of an oxide semiconductor material, and a source electrode and a drain electrode which are separated on the semiconductor pattern. One of the source electrode and the drain electrode is separated from the gate electrode.