| 摘要 |
<p>Disclosed is a power semiconductor device capable of increasing a breakdown voltage. For examples, in a power semiconductor device which has an active region and a termination region which surrounds the active region, the power semiconductor device includes a first conductivity type substrate formed on the entire part of the active region and the termination region; a first conductivity type semiconductor layer formed on the upper side of the substrate; first columns of a second conductivity type which have a predetermined depth from the upper part of the semiconductor layer; and second columns of the second conductivity type which surrounds the first columns in the first termination region.</p> |
