| 摘要 |
PROBLEM TO BE SOLVED: To suppress occurrence of variation in the threshold voltage of a MOSFET, when employing a manufacturing method for forming the gate oxide film and polysilicon film of the MOSFET entirely on a semiconductor substrate, and then forming an ONO film and a polysilicon film for forming the gate electrode of a MONOS FET.SOLUTION: In a region on a semiconductor substrate where a MOSFET is formed, a gate oxide film is formed, while furthermore a first polysilicon film becoming the gate electrode of the MOSFET is deposited. Thereafter, a region where a MONOS FET is formed is opened to expose the semiconductor surface of the semiconductor substrate, and a charge storage 3 layer film is formed by depositing a first potential barrier film, a charge storage film and a second potential barrier film sequentially. At this time, an antioxidation film is deposited on the first polysilicon film, before forming the charge storage 3 layer film. |
