CMOS INVERTERS AND FABRICATION METHODS THEREOF

摘要

A CMOS inverter is provided. The CMOS inverter includes a substrate. The CMOS inverter also includes an NMOS transistor having a first active region, a first isolation structure surrounding the first active region, a first connect structure, a plurality of the first metal interconnect structure and a first shunted gate structure to reduce a delay time and increase a saturation current. Further, the CMOS inverter includes a PMOS transistor having a second active region with a reduced area to reduce the delay time and increase the saturation current, a second isolation structure surrounding the second active region, a second connect structure, a plurality of metal interconnect structure and a second gate structure connecting with the first gate structure through the first connect structure and/or the second connect structure.

主权项

1. A CMOS inverter, comprising:
a substrate; an NMOS transistor having a first active region, an isolation structure surrounding the first active region, a first gate structure formed on the first active region and the first isolation structure; a first connect structure; and a plurality of first metal interconnect structure; and a PMOS transistor having a second active region, a second isolation structure surrounding the second active region, a second gate structure connected with the first gate structure, and a plurality of the second metal interconnect structure, wherein:
the first connect structure of the NMOS transistor connects with the PMOS transistor;the first gate structure is a shunted gate structure having a plurality of parallel first parts and a plurality of parallel second parts sequentially connected with the first parts with a pre-determined angle; anda portion of the second metal interconnect structure is formed in the second active region and the other portion of the second metal interconnect structure is formed on the second isolation structure.