| 发明名称 |
Semiconductor Device |
| 摘要 |
A semiconductor device includes at least one field effect transistor structure, which is formed on a semiconductor substrate. The field effect transistor structure includes a drift region, a body region, a source region and a gate. The source region and the drift region include at least mainly a first conductivity type, wherein the body region includes at least mainly a second conductivity type. The body region includes at least one low doping dose portion extending from the drift region to at least one of the source region or an electrical contact interface of the body region at a main surface of the semiconductor substrate, wherein a doping dose within the low doping dose portion of the body region is less than 3 times a breakdown charge. |
| 申请公布号 |
US2015179636(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314133912 |
申请日期 |
2013.12.19 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Pfirsch Frank Dieter;Werber Dorothea |
| 分类号 |
H01L27/06;H01L29/06;H01L29/423;H01L29/739;H01L29/10 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device with at least one field effect transistor structure comprising a semiconductor substrate comprising a drift region, at least one body region, at least one source region and at least one gate, wherein the source region and the drift region comprise at least mainly a first conductivity type, wherein the body region comprises at least mainly a second conductivity type, wherein the body region comprises at least a low doping dose portion extending from the drift region to at least one of the source region or an electrical contact interface of the body region at a main surface of the semiconductor substrate, wherein a doping dose within the low doping dose portion of the body region is less than 3 times a breakdown charge. |
| 地址 |
Neubiberg DE |
