| 发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
| 摘要 |
There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate. |
| 申请公布号 |
US2015179546(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314409634 |
申请日期 |
2013.06.19 |
| 申请人 |
SONY CORPORATION |
发明人 |
Wakiyama Satoru;Okamoto Masaki;Ooka Yutaka;Shohji Reijiroh;Zaizen Yoshifumi;Nagahata Kazunori;Haneda Masaki |
| 分类号 |
H01L23/48;H01L21/306;H01L21/768;H01L25/065;H01L25/00 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first semiconductor base substrate; a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate; a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate; and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate. |
| 地址 |
Tokyo JP |
