SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE

摘要

The objective of the present invention is to provide: a thin film transistor which easily enables self-aligning formation of a source/drain region without requiring a process under vacuum or low pressure or without using expensive equipment; and a method for producing the thin film transistor. A method for producing a thin film transistor according to the present invention comprises: an aliphatic polycarbonate layer formation step for forming an aliphatic polycarbonate layer (50) which covers a semiconductor layer (20) and a gate electrode layer (40) that is arranged on the semiconductor layer (20) with a gate insulating layer (30) being interposed therebetween, and which contains a dopant that converts the semiconductor layer (20) into an n-type or p-type semiconductor layer; and a heating step for introducing the dopant into the semiconductor layer (20), while heating at a temperature at which the aliphatic polycarbonate layer (50) is decomposed.