FAILURE PREDICTION METHOD OF POWER SEMICONDUCTOR DEVICE

摘要

The present invention relates to a failure prediction method of a power semiconductor device. The purpose of the present invention is to predict the failure of a power semiconductor device without applying a separate signal to the operating power semiconductor device. According to an embodiment of the present invention to achieve the purpose, the failure prediction method of a power semiconductor device comprises: a correcting step of producing a temperature-drain resistance interaction formula by correcting drain resistance for the temperature of a bonding unit of the power semiconductor device; a measuring step of measuring a gate current, drain voltage, and drain current of the power semiconductor device; a notification step of warning the failure generation possibility of the power semiconductor device by calculating the temperature of the bonding unit of the power semiconductor device by using the temperature-drain resistance interaction formula and comparing the gate current and the temperature of the bonding unit with a predetermined standard value.