发明名称 有機分子メモリ
摘要 <p>PROBLEM TO BE SOLVED: To provide an organic molecular memory controlling current flowing through a memory cell, and having a stable operation and high reliability.SOLUTION: An organic molecular memory of an embodiment includes: a first electrode; a second electrode formed of a material different from the material of the first electrode; and an organic molecular layer which is provided between the first electrode and the second electrode and in which one end of a resistance change-type molecular chain constituting the organic molecular layer is chemically bonded to the first electrode and a gap is present between the other end of the resistance change-type molecular chain and the second electrode. When the one end of the resistance change-type molecular chain is a thiol group, a region chemically bonded to the one end, in the first electrode comprises gold (Au), silver (Ag), copper (Cu), tungsten (W), a tungsten nitride (WN), a tantalum nitride (TaN) or a titanium nitride (TiN), and a region facing the other end, in the second electrode comprises tantalum (Ta), molybdenum (Mo), a molybdenum nitride (MoN) or silicon (Si).</p>
申请公布号 JP5739042(B2) 申请公布日期 2015.06.24
申请号 JP20140118043 申请日期 2014.06.06
申请人 发明人
分类号 H01L27/105;H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30 主分类号 H01L27/105
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