发明名称 |
Recrystallisation of blocks with source and drain by the top |
摘要 |
<p>A Method for manufacturing a transistor comprising: a) amorphization and doping, by means of one or more localised implantation(s), of given regions of source and drain blocks based on crystalline semi-conductor material lying on an insulating layer of a semi-conductor on insulator substrate, the implantation(s) being carried out so as to conserve at the surface of said blocks zones of crystalline semi-conductor material on the regions of amorphous semi-conductor material, b) recrystallization of at least one portion of said given regions.</p> |
申请公布号 |
EP2840594(A3) |
申请公布日期 |
2015.06.24 |
申请号 |
EP20140179982 |
申请日期 |
2014.08.06 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES;STMICROELECTRONICS SA |
发明人 |
BATUDE, PERRINE;MAZEN, FRÉDÉRIC;SKLENARD, BENOÎT |
分类号 |
H01L21/336;H01L21/265;H01L29/10;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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