发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF |
摘要 |
<p>The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. Two of the power units placed adjacent to each other in the predetermined direction have a passage therebetween through which the resin flows injected during manufacturing. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements such that the structure prevents the resin from flowing downstream in a resin flow direction, the end parts being on a side opposite to another side closer to the inlet.</p> |
申请公布号 |
EP2824696(A8) |
申请公布日期 |
2015.06.24 |
申请号 |
EP20130757297 |
申请日期 |
2013.02.28 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
KADOGUCHI, TAKUYA;IWASAKI, SHINGO;MOCHIDA, AKIRA;OKUMURA, TOMOMI |
分类号 |
H01L21/56;H01L23/31;H01L23/495;H01L23/498;H01L25/07;H01L25/18 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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