METHOD FOR PREPARING MONOCRYSTALLINE GRAPHENE

摘要

The present invention relates to a method for producing monocrystalline graphene with a large area in a large amount by a continuous process. The method includes the steps of: forming a high temperature heat part with the temperature of 900-1200°C or higher on a substrate including a metal thin film by using a high temperature heat generating device; and making the high temperature heat part come into contact with a carbon source by supplying the carbon source.