发明名称 光導電素子及び撮像デバイス
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photoconductive cell and imaging device including a hole injection inhibition layer capable of achieving a high S/N and high quality image with high sensitivity and high resolution by suppressing a dark current. <P>SOLUTION: The photoconductive cell includes: a translucent substrate; a conductive film formed on the translucent substrate; a hole injection inhibition layer formed on the conductive film; and a photoconductive layer formed on the hole injection inhibition layer. The hole injection inhibition layer is formed from gallium oxide. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5739763(B2) 申请公布日期 2015.06.24
申请号 JP20110169558 申请日期 2011.08.02
申请人 发明人
分类号 H01J29/45 主分类号 H01J29/45
代理机构 代理人
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