| 摘要 |
A semiconductor has improved properties. The semiconductor device is configured to have a groove (T) penetrating a barrier layer (BA) among a potential fixing layer (VC), a channel underlayer (UC), a channel layer (CH), and a barrier layer (BA), and reaching the inside of the channel layer (CH); a gate electrode (GE) arranged by interposing a gate insulation film (GI) in the groove (T); and a source electrode (SE) and a drain electrode (DE) formed on the upper part of barrier layer (BA) on both sides of the gate electrode (GE), respectively. And, the potential fixing layer (VC) and the source electrode (SE) are electrically connected by a connection part (VIA) inside a through-hole (TH) reaching the potential fixing layer (VC). Accordingly, changes in properties such as threshold potential or temperature resistance can be reduced. |
