| 摘要 |
<p>A method of manufacturing a semiconductor device includes processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber. The semiconductor substrate has an uneasily-etched material formed thereabove and at least an upper layer film formed above the uneasily-etched material. The method includes etching the upper layer film after loading the semiconductor substrate into the processing chamber; forming a lift-off layer along an inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber; etching the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the lift-off layer; and cleaning, by removing the reactive product by removing the lift-off layer, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus.</p> |
