METHOD AND SYSTEM FOR OPTIMIZING THE NUMBER OF WORD LINE SEGMENTS IN A SEGMENTED MRAM ARRAY

摘要

A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.