磁気抵抗効果素子、ダイオードおよびトランジスタを用いた磁気ランダムアクセスメモリ

摘要

A magnetic memory according to an embodiment includes: a magnetoresistive element including a first magnetic layer having a magnetization direction not to be changed by spin-injection writing, a second magnetic layer having a magnetization direction to be changeable by the spin-injection writing, and a tunnel barrier layer provided between the first and second magnetic layers; a first interconnect electrically connected to one of the first and second magnetic layers; a select transistor, with one of a source and drain thereof being electrically connected to the other one of the first and second magnetic layers; a second interconnect electrically connected to the other one of the source and drain; a diode having one terminal electrically connected to the other one of the first and second magnetic layers; a third interconnect electrically connected to the other terminal of the diode; and a sense amplifier electrically connected to the third interconnect.