| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a large current gain of an InP-based HBT having a base layer of a GaAsSb-based compound semiconductor. <P>SOLUTION: A heterojunction bipolar transistor has: a base layer 103 formed on a collector layer 102 and consisting of a compound semiconductor configured by Ga, As, and Sb; a spacer layer 104 contacting with and formed on the base layer 103; and an emitter layer 105 contacting with and formed on the spacer layer 104 and consisting of a compound semiconductor configured by In and P. The spacer layer 104 is formed to contact with the base layer 103 and the emitter layer 105 in a state of having an energy level of a conduction band edge lower than that of the base layer 103 and higher than that of the emitter layer 105, and having an energy level of a valence band edge lower than that of the base layer 103 and higher than that of the emitter layer 105. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
