发明名称 |
METHOD FOR FABRICATING GROUP III NITRIDE DEVICES |
摘要 |
<p>A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.</p> |
申请公布号 |
EP1763900(B1) |
申请公布日期 |
2015.06.24 |
申请号 |
EP20050751127 |
申请日期 |
2005.05.17 |
申请人 |
CREE, INC. |
发明人 |
NAKAMURA, SHUJI;DENBAARS, STEVEN;EDMOND, JOHN;MISHRA, UMESH;SWOBODA, CHARLES |
分类号 |
H01L33/10;H01L33/00;H01L33/14;H01L33/32;H01L33/38;H01L33/46 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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