| 摘要 |
<p>Provided are a plasma processing apparatus (1) and a processing gas supply structure (30) thereof, capable of improving processing uniformity in a wafer surface as compared to a conventional case. There is provided a plasma processing apparatus (1) for generating inductively coupled plasma in a processing chamber (10) and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover (12) installed to cover a top opening of the processing chamber (10) and having a dielectric window (13); a high frequency coil (14) installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism (30) supported by the upper cover (12) and installed under the dielectric window (14). Here, the gas supply mechanism includes a layered body (35) including a multiple number of plates (31-34) having through holes (41-44). Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber (10) in a horizontal direction from a multiple number of ports via a multiple number of groove-shaped gas channels (51-54) installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels (51-54) are opened to edges of the through holes (41-44).</p> |
