CHEMICAL VAPOR DEPOSITION MATERIAL FORMED OF RUTHENIUM COMPLEX, METHOD FOR PRODUCING SAME AND CHEMICAL VAPOR DEPOSITION METHOD

摘要

The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a raw material for chemical deposition having a preferable decomposition temperature, and the production cost therefor is low:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[Chemical Formula 1]€ƒ€ƒ€ƒ€ƒ€ƒ(nR - L)Ru(CO) 3
wherein L is a polyene having a carbon number of from 4 to 8 and 2 to 4 double bonds, wherein the polyene L has n (n ‰¥ 1) pieces of substituents Rs, wherein the substituents Rs are each a fluoroalkyl group having a carbon number of from 1 to 6 and a fluorine number of from 1 to 13, and in the case when the polyene L has two or more (n ‰¥ 2) of the substituents Rs, the carbon numbers and the fluorine numbers of the substituents Rs may be different in the same molecule.