发明名称 Process of making an all-silicon microphone
摘要 <p>The upper and lower capacitive plates are formed by etching the single crystal silicon layers that are doped with boron and germanium. A capacitive output signal is produced in response to changes in the distance between the capacitor plates that occur as a result of sound induced vibration.</p>
申请公布号 EP1398298(A3) 申请公布日期 2015.06.24
申请号 EP20030077437 申请日期 2003.08.04
申请人 DELPHI TECHNOLOGIES, INC. 发明人 FREEMAN, JOHN E.;BANEY, WILLIAM J.;BETZNER, TIMOTHY M.;CHILCOTT, DAN W.;CHRISTENSON, JOHN C.;VAS, TIMOTHY A.;QUEEN, GEORGE M.;LONG, STEPHEN P.
分类号 B81C1/00;H01L21/00;H04R19/00;H04R25/00;H04R31/00 主分类号 B81C1/00
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