<p>The upper and lower capacitive plates are formed by etching the single crystal silicon layers that are doped with boron and germanium. A capacitive output signal is produced in response to changes in the distance between the capacitor plates that occur as a result of sound induced vibration.</p>
申请公布号
EP1398298(A3)
申请公布日期
2015.06.24
申请号
EP20030077437
申请日期
2003.08.04
申请人
DELPHI TECHNOLOGIES, INC.
发明人
FREEMAN, JOHN E.;BANEY, WILLIAM J.;BETZNER, TIMOTHY M.;CHILCOTT, DAN W.;CHRISTENSON, JOHN C.;VAS, TIMOTHY A.;QUEEN, GEORGE M.;LONG, STEPHEN P.