发明名称 |
Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium |
摘要 |
Provided is a substrate processing apparatus including a reaction chamber configured to heat a substrate; a transfer chamber configured to transfer the heated substrate; a refrigerant flow path installed in the reaction chamber; a refrigerant flow path installed in the reaction chamber; a refrigerant supply unit installed in the refrigerant flow path; a refrigerant exhaust unit installed in the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the refrigerant exhaust pipe and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the refrigerant supply unit and the transfer chamber refrigerant supply unit. |
申请公布号 |
US9064913(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201414226031 |
申请日期 |
2014.03.26 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
Nakagawa Hitoshi |
分类号 |
H01L21/00;H01L21/31;H01L21/469;H01L21/67;F01K25/14;F01K13/00;F01K25/10;F22B1/18;H01L21/324 |
主分类号 |
H01L21/00 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A substrate processing apparatus comprising:
a reaction chamber where a substrate is heated; a transfer chamber configured to accommodate the substrate heated in the reaction chamber; a refrigerant flow path installed at the reaction chamber; a reaction chamber refrigerant supply unit configured to supply a first refrigerant into the refrigerant flow path; a reaction chamber refrigerant exhaust unit configured to exhaust the first refrigerant from the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the reaction chamber refrigerant exhaust unit and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the reaction chamber refrigerant supply unit and the transfer chamber refrigerant supply unit; wherein the control unit controls the reaction chamber refrigerant supply unit to supply the first refrigerant after the substrate is heated and the transfer chamber refrigerant supply unit to supply a second refrigerant when the substrate is transferred from the reaction chamber to the transfer chamber. |
地址 |
Tokyo JP |