Thin-film transistor array substrate and display device including the same

摘要

A TFT array substrate includes: a first insulation layer over a semiconductor layer; a second insulation layer over a plurality of first gate wires formed on the first insulation layer; a third insulation layer over a plurality of second gate wires formed on the second insulation layer; a cover metal formed over the third insulation layer and contacting the semiconductor layer through a contact hole that passes through the first, second and third insulation layers; a fourth insulation layer over the cover metal; a protection layer formed over the fourth insulation layer; and an anode electrode formed over the protection layer and contacting the cover metal through a via hole that passes through the protection layer, the fourth insulation layer, and the contact hole.

主权项

1. A thin-film transistor (TFT) array substrate comprising:
a first insulation layer over a semiconductor layer; a second insulation layer over a plurality of first gate wires formed over the first insulation layer; a third insulation layer over a plurality of second gate wires formed over the second insulation layer; a cover metal formed over the third insulation layer and contacting the semiconductor layer through a contact hole that passes through the first, second and third insulation layers; a fourth insulation layer over the cover metal; a protection layer formed over the fourth insulation layer; an anode electrode formed over the protection layer and contacting the cover metal through a via hole that passes through the protection layer, the fourth insulation layer, and the contact hole; and a capacitor comprising:
a first electrode, anda second electrode; and a plurality of second signal wires disposed over the fourth insulation layer and overlapping with the second electrode of the capacitor.