发明名称 |
Nitridation of atomic layer deposited high-k dielectrics using trisilylamine |
摘要 |
A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film. |
申请公布号 |
US9064694(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201313941429 |
申请日期 |
2013.07.12 |
申请人 |
Tokyo Electron Limited |
发明人 |
Consiglio Steven P;Clark Robert D;Dussarrat Christian;Omarjee Vincent;Pallem Venkat;Kuchenbeiser Glenn |
分类号 |
H01L21/02;H01L21/469;C23C16/00;C23C16/30;C23C16/455;H01L21/28;H01L29/51 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a nitrided high-k film, the method comprising:
receiving a substrate in a process chamber; maintaining the substrate at a temperature sufficient for atomic layer deposition of a nitrided high-k film; and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a first gas pulse comprising a metal-containing precursor, b) exposing the substrate to a second gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a third gas pulse comprising trisilylamine (N(SiH3)3) gas,
wherein the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that contains >3 atomic % N and <1 atomic % Si, and repeating the gas pulse sequence. |
地址 |
Tokyo JP |