Method for forming Cu wiring

摘要

A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

主权项

1. A method for forming a Cu wiring in a recess formed in an insulating film on a substrate, the method comprising:
forming a barrier film on a surface of the recess and a surface of the insulating film outside the recess; forming a Cu film by PVD on the barrier film to fill the recess with the Cu film; forming an additional layer on the Cu film; removing by CMP the barrier film, the Cu film and the additional film formed outside the recess while leaving the barrier film and the Cu film formed in the recess to thereby form the Cu wiring in the recess; forming a metal cap formed of a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate; and forming a dielectric cap on the metal cap.