发明名称 Method for preparing doped organic semiconductor materials and formulation utilized therein
摘要 The present invention relates to a method for preparing doped organic semiconductor materials as well as a formulation which may be utilized in that method. The doped organic semiconductor materials are prepared by preparing a solution or suspension containing at least one dopant precursor, at least one organic material to be doped, and a solvent. The solution or suspension is then applied onto a substrate. After removing the solvent, the dopant precursor is converted into a dopant by application of activation energy. The dopant precursor, which is a dimer, oligomer, polymer, dispiro compound, or polycycle, is cleaved by the application of activation energy.
申请公布号 US9065055(B2) 申请公布日期 2015.06.23
申请号 US200712293765 申请日期 2007.03.21
申请人 NOVALED AG 发明人 Zeika Olaf;Lux Andrea;Gruessing Andre;Limmert Michael;Hartmann Horst;Werner Ansgar;Ammann Martin
分类号 C30B30/00;H01L31/04;H01L51/00;C07D285/10;C07D271/107;C09K11/06;H05B33/14;H05B33/20;H01L51/50 主分类号 C30B30/00
代理机构 Sutherland Asbill & Brennan LLP 代理人 Sutherland Asbill & Brennan LLP
主权项 1. A method for preparing doped organic semiconductor materials comprising the following steps: (i) preparing a solution or suspension comprising at least one dopant precursor, at least one organic material to be doped, and a solvent, (ii) applying the solution or suspension onto a substrate and removing the solvent, and (iii) converting the dopant precursor into a dopant by application of activation energy, wherein the dopant precursor is a dimer, oligomer, polymer, dispiro compound, or polycycle of the dopant into which the dopant precursor is cleaved by application of activation energy, wherein the difference between the oxidation potential of the dopant precursor and reduction potential of the organic material to be doped is greater than 0.05 V, and wherein the dopant is selected from the group consisting of: wherein structure 3 comprises one or more cyclic linkages selected from the group consisting of A, A1, and A2, wherein A, A1, and A2, independent of each other, comprise, substituted or unsubstituted, carbocyclic, heterocyclic, or polycyclic ring systems; wherein in structure 5 Al and A2 are present alone or together and are as defined above, wherein T is selected from the group consisting of CR22, CR22R23, N, NR21, O, and S; wherein structure 7 comprises one or more bridging linkages selected from the group consisting of Z, Z1, and Z2, and wherein Z, Z1, and Z2 are independently selected from alkyl, alkenyl, alkynyl, cycloalkyl, sililyl, alkylsililyl, diazo, disulfide, heterocycloalkyl, heterocyclyl, piperazinyl, dialkylether, polyether, primary alkyl amine, arylamine and polyamine, aryl, or and heteroaryl; wherein in structures 8a-8c the ring per heterocycle comprises from 5 to 7 atoms, wherein X and Y are independently selected from the group consisting of O, S, N, NR21, P, and PR21; and R0-18, R21, R22, and R23 are independently selected from, substituted or unsubstituted, aryl, heteroaryl, heterocyclyl, diarylamine, diheteroarylamine, dialkyl amine, heteroarylalkylamine, arylalkylamine, H, F, cycloalkyl, halogencycloalkyl, heterocycloalkyl, alkyl, alkenyl, alkynyl, trialkylsilyl, triarylsilyl, halogen, styryl, alkoxy, aryloxy, thioalkoxy, thioaryloxy, sililyl, trialkylsilylalkynyl, or a (hetero)aliphatic or y, (hetero)aromatic ring system, wherein the (hetero)aliphatic or (hetero)aromatic ring system comprises one or more of R0-l8, R21, R22, and R23, the organic material to be doped has a reduction potential vs. Fc/Fc+that is more negative than −1.0 V, and wherein no hydrogen or Lewis acid is released upon cleavage.
地址 Dresden DE