主权项 |
1. A method of modifying a surface of an electrode active material, the method comprising:
providing a solution or a suspension of a surface modification agent; providing the electrode active material; preparing a slurry of the solution or suspension of the surface modification agent, the electrode active material, a polymeric binder, and a conductive filler; casting the slurry on a metallic current collector; and drying the cast slurry; wherein:
the surface modification agent is a compound selected from the group consisting of aluminum sec-butoxide, diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, triethylaluminum, triisobutylaluminum, trimethylaluminum, tris(diethylamido)aluminum, trimethylarsine, diborane, trimethylboron, bis(N,N′-diisopropylacetaminato)cobalt (II), dicarbonyl(cyclopentadienyl)cobalt (I), (N,N′-diisopropylacetaminato)copper (II), bis(N,N′-di-tert-butylacetamidinato)iron (II), gallium tribromide, gallium trichloride, triethylgallium, triisopropylgallium, trimethylgallium, tri(dimethylamido)gallium, tri-tert-butylgallium, digermane, germane, tetramethylgermanium, hafnium (IV) chloride, hafnium (IV) tert-butoxide, tetrakis(diethylamido)hafnium (IV), tetrakis(dimethylamido)hafnium (IV), tetrakis(ethylmethylamido)hafnium (IV), indium trichloride, indium(I) iodide, indium acetylacetonate, triethylindium, tris(N,N′-Di-tert-butylacetamidinato)lanthanum (III), bis(pentaethylcyclopentadienyl)magnesium, molybdenum hexacarbonyl, N,N-dimethylhydrazine, niobium (V) ethoxide, bis(methyl-cyclopentadienyl)nickel (II), phosphine, tert-butylphosphine, cyclopentadienyl(trimethyl)platinum (IV), bis(ethylcyclopentadienyl) ruthenium (II), trimethylantimony, tris(dimethylamido) antimony, pentakis(dimethylamido)tantalum (V), tantalum (V) chloride, tantalum (V) ethoxide, tris(diethylamino)(tert-butylimido)tantalum (V), bis(diethylamido)bis(dimethylamido) titanium (IV), tetrakis(diethylamido)titanium (IV), tetrakis(dimethylamido)titanium (IV), tetrakis(ethylmethylamido)titanium (IV), titanium (IV) tert-butoxide, vanadium (V) oxytriisopropoxide, bis(tert-butylimido)bis(dimethylamido)tungsten (VI), tungsten hexacarbonyl, tungsten (VI) chloride, yttrium (III) butoxide, diethylzinc, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), tetrakis(ethylmethylamido)zirconium (IV), zirconium (IV) tert-butoxide, and a mixture of any two or more thereof. |