Semiconductor structure having contact plug and metal gate transistor and method of making the same

摘要

The present invention provides a semiconductor structure including at least a contact plug. The structure includes a substrate, a transistor, a first ILD layer, a second ILD layer and a first contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor and levels with a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The first contact plug is disposed in the first ILD layer and the second ILD layer and includes a first trench portion and a first via portion, wherein a boundary of the first trench portion and a first via portion is higher than the top surface of the gate. The present invention further provides a method of making the same.

主权项

1. A semiconductor structure having at least a contact plug, comprise:
a transistor disposed on a substrate, wherein the transistor comprises a gate and a source/drain region; a first inter-layer dielectric (ILD) layer disposed on the transistor and level with a top surface of the gate; a second ILD layer disposed on the first ILD layer; and a first contact plug disposed in and directly contacting both the first ILD layer and the second ILD layer, wherein the first contact plug comprises a first trench portion and a first via portion, a boundary of the first trench portion and the first via portion is higher than the top surface of the gate and located in the second ILD layer, and a portion of the second ILD layer is disposed between the boundary of the first trench portion and the first via portion and a top surface of the first ILD layer.