Sub-diffraction-limited patterning and imaging via multi-step photoswitching

摘要

Sub-diffraction-limited patterning using a photoswitchable recording material is disclosed. A substrate can be provided with a photoresist in a first transition state. The photoresist can be configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination. An optical device can selectively expose the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state. The optical device or a substrate carrier securing the substrate can modify the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern. The method can further convert one of the first and second transition states of the photoresist into an irreversible transition state, while the other of the first and second transition states remains in a reversible transition state. The photoresist can be developed to remove the regions of the photoresist in the irreversible transition state.

主权项

1. A method for sub-diffraction-limited patterning using a photoswitchable recording material, comprising:
providing a substrate with a photoresist in a first transition state, wherein the photoresist is configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination; selectively exposing the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state; modifying the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern; converting one of the first transition state and the second transition state of the photoresist into an irreversible transition state, wherein one of the first transition state or the second transition state of the photoresist remains in a reversible transition state; and developing the photoresist to remove the regions of the photoresist in the irreversible transition state.