发明名称 |
Photo diode and method of forming the same |
摘要 |
A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer. |
申请公布号 |
US9064986(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201314025890 |
申请日期 |
2013.09.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Wang Tzu-Jui;Chou Keng-Yu;Chuang Chun-Hao;Hsu Ming-Chieh;Yamashita Yuichiro;Liu Jen-Cheng;Yaung Dun-Nian |
分类号 |
H01L21/00;H01L31/113;H01L31/0232;H01L31/18 |
主分类号 |
H01L21/00 |
代理机构 |
Jones Day |
代理人 |
Jones Day |
主权项 |
1. A method for forming a photo diode, comprising:
forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; forming a top electrode over the photo conversion layer; and forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer. |
地址 |
Hsinchu TW |