发明名称 Photo diode and method of forming the same
摘要 A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.
申请公布号 US9064986(B2) 申请公布日期 2015.06.23
申请号 US201314025890 申请日期 2013.09.13
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Wang Tzu-Jui;Chou Keng-Yu;Chuang Chun-Hao;Hsu Ming-Chieh;Yamashita Yuichiro;Liu Jen-Cheng;Yaung Dun-Nian
分类号 H01L21/00;H01L31/113;H01L31/0232;H01L31/18 主分类号 H01L21/00
代理机构 Jones Day 代理人 Jones Day
主权项 1. A method for forming a photo diode, comprising: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; forming a top electrode over the photo conversion layer; and forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.
地址 Hsinchu TW