Memory including blocking dielectric in etch stop tier

摘要

Vertical memories and methods of making the same are discussed generally herein. In one embodiment, a vertical memory can include a vertical pillar extending to a source, an etch stop tier over the source, and a stack of alternating dielectric tiers and conductive tiers over the etch stop tier. The etch stop tier can comprise a blocking dielectric adjacent to the pillar. In another embodiment, the etch stop tier can comprise a blocking dielectric adjacent to the pillar, and a plurality of dielectric films horizontally extending from the blocking dielectric into the etch stop tier.

主权项

1. A memory comprising:
a vertical pillar coupled to a source; a dielectric etch stop tier over the source, the dielectric etch stop tier comprising a blocking dielectric adjacent to the pillar, and a plurality of dielectric films horizontally extending from the blocking dielectric into the dielectric etch stop tier and separating the dielectric etch stop tier into multiple dielectric tiers; and a stack of alternating dielectric tiers and conductive tiers over the dielectric etch stop tier.