发明名称 Methods of making integrated circuits
摘要 A method of making an integrated circuit including forming a seal ring structure around a circuit where the seal ring structure has a first portion and a tilted portion. The first portion of the seal ring structure is substantially parallel with an edge of the circuit. The tilted portion of the seal ring structure forms an obtuse angle with the first portion. The method further includes forming a first pad which is electrically coupled with the seal ring structure. The method further includes disposing a leakage current test structure in an area enclosed by the seal ring where at least one portion of the leakage current test structure is substantially parallel with the tilted portion of the seal ring structure. The method further includes forming a second pad which is electrically coupled with the leakage current test structure.
申请公布号 US9064939(B2) 申请公布日期 2015.06.23
申请号 US201414322122 申请日期 2014.07.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Yang Chung-Ying;Chen Hsien-Wei
分类号 H01L21/66;H01L21/768;H01L23/58;H01L23/00 主分类号 H01L21/66
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. A method of making an integrated circuit comprising: forming a seal ring structure around a circuit, wherein the seal ring structure has a first portion and a tilted portion, the first portion of the seal ring structure being substantially parallel with an edge of the circuit, the tilted portion of the seal ring structure forming an obtuse angle with the first portion; forming a first pad which is electrically coupled with the seal ring structure; disposing a leakage current test structure in an area enclosed by the seal ring structure, wherein at least one portion of the leakage current test structure is substantially parallel with the tilted portion of the seal ring structure; and forming a second pad which is electrically coupled with the leakage current test structure, wherein the leakage current test structure is configured to provide a leakage current test between the seal ring structure and the leakage current test structure.
地址 TW