Interconnect with titanium—oxide diffusion barrier

摘要

An interconnect structure located on a semiconductor substrate within a dielectric material positioned atop the semiconductor substrate is provided having an opening within the dielectric material, the opening includes an electrically conductive material extending from the bottom to the top, and contacting the sidewall; a first layer located on the sidewall of the opening, the first layer is made from a material including titanium oxide or titanium silicon oxide; a second layer located between the first layer and the electrically conductive material, the second layer is made from a material selected from the group TiXOb, TiXSiaOb, XOb, and XSiaOb, X is Mn, Al, Sn, In, or Zr; and a third layer located along a top surface of the electrically conductive material, the third layer is made from a material selected from the group TiXOb, TiXSiaOb, XOb, and XSiaOb, X is Mn, Al, Sn, In, or Zr.

主权项

1. An interconnect structure located on a semiconductor substrate within a dielectric material positioned atop the semiconductor substrate, the interconnect structure comprising:
an opening within the dielectric material, the opening including a bottom, a top, and a sidewall, wherein the opening comprises an electrically conductive material extending from the bottom to the top, and contacting the sidewall; a first layer located on the sidewall of the opening, wherein the first layer is made from a material comprising titanium oxide or titanium silicon oxide; a second layer located between the first layer and the electrically conductive material; where in the second layer is made from a material selected from the group consisting of Ta, Co, Ru, TaTi, CoTi, and RuTi; and a third layer located along a top surface of the electrically conductive material, wherein the third layer is made from a material selected from the group consisting of TiXOb, TiXSiaOb, XOb, and XSiaOb, wherein X is Mn, Al, Sn, In, or Zr.