Semiconductor device and method of forming bump-on-lead interconnection

摘要

A semiconductor device has a semiconductor die with a plurality of composite bumps formed over a surface of the semiconductor die. The composite bumps have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. The composite bumps can also be tapered. Conductive traces are formed over a substrate with interconnect sites having edges parallel to the conductive trace from a plan view for increasing escape routing density. The interconnect site can have a width less than 1.2 times a width of the conductive trace. The composite bumps are wider than the interconnect sites. The fusible portion of the composite bumps is bonded to the interconnect sites so that the fusible portion covers a top surface and side surface of the interconnect sites. An encapsulant is deposited around the composite bumps between the semiconductor die and substrate.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor die including an interconnect structure comprising a non-fusible portion formed over the semiconductor die; providing a substrate including a conductive trace formed over the substrate; and bonding the interconnect structure to an upper surface and side surface of the conductive trace with the non-fusible portion of the interconnect structure providing vertical standoff.