Semiconductor device and method for manufacturing the same

摘要

A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

主权项

1. A semiconductor device comprising:
a gate electrode; a gate insulating film comprising a silicon nitride oxide film over the gate electrode, a silicon oxynitride film over the silicon nitride oxide film, and a metal oxide film over the silicon oxynitride film; an oxide semiconductor film over and in contact with the metal oxide film; a source electrode and a drain electrode over the oxide semiconductor film; and a protective film over and in contact with the oxide semiconductor film, the source electrode, and the drain electrode, wherein the oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor, wherein the oxide semiconductor film is an In—Ga—Zn-based oxide film, and wherein the metal oxide film is a Ga—Zn-based oxide film.