发明名称 |
Metal-oxide-metal capacitor apparatus with a via-hole region |
摘要 |
A metal-oxide-metal capacitor comprises a first electrode, a second electrode, a plurality of first fingers and a plurality of second fingers. Each first finger and its corresponding second finger are in parallel and separated by a low k dielectric material. A via-hole region is employed to enclose the metal-oxide-metal capacitor so as to remove the moisture stored in the low k dielectric material. |
申请公布号 |
US9064841(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201113269401 |
申请日期 |
2011.10.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Jiun-Jie;Wang Ling-Sung;Lin Chi-Yen |
分类号 |
H01L21/02;H01L49/02 |
主分类号 |
H01L21/02 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An apparatus comprising:
a metal-oxide-metal capacitor comprising a low k dielectric insulation layer and a via plug formed in the low k dielectric insulation layer, wherein the metal-oxide-metal capacitor is over a semiconductor substrate; and a via-hole region enclosing the metal-oxide-metal capacitor, wherein the via-hole region comprises a plurality of via holes, and wherein the via-hole region comprises upper via holes formed in an upper metal-oxide-metal layer of the metal-oxide-metal capacitor and in direct contact with a first side of the low k dielectric insulation layer and bottom via holes formed in a lower metal-oxide-metal layer of the metal-oxide-metal capacitor and in direct contact with a second side of the low k dielectric insulation layer. |
地址 |
Hsin-Chu TW |