发明名称 Metal-oxide-metal capacitor apparatus with a via-hole region
摘要 A metal-oxide-metal capacitor comprises a first electrode, a second electrode, a plurality of first fingers and a plurality of second fingers. Each first finger and its corresponding second finger are in parallel and separated by a low k dielectric material. A via-hole region is employed to enclose the metal-oxide-metal capacitor so as to remove the moisture stored in the low k dielectric material.
申请公布号 US9064841(B2) 申请公布日期 2015.06.23
申请号 US201113269401 申请日期 2011.10.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Huang Jiun-Jie;Wang Ling-Sung;Lin Chi-Yen
分类号 H01L21/02;H01L49/02 主分类号 H01L21/02
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An apparatus comprising: a metal-oxide-metal capacitor comprising a low k dielectric insulation layer and a via plug formed in the low k dielectric insulation layer, wherein the metal-oxide-metal capacitor is over a semiconductor substrate; and a via-hole region enclosing the metal-oxide-metal capacitor, wherein the via-hole region comprises a plurality of via holes, and wherein the via-hole region comprises upper via holes formed in an upper metal-oxide-metal layer of the metal-oxide-metal capacitor and in direct contact with a first side of the low k dielectric insulation layer and bottom via holes formed in a lower metal-oxide-metal layer of the metal-oxide-metal capacitor and in direct contact with a second side of the low k dielectric insulation layer.
地址 Hsin-Chu TW