Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same

摘要

A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

主权项

1. A lateral flow atomic layer deposition (ALD) apparatus in which a process gas flows between a surface in which a substrate is placed and a surface opposite thereto in a direction that is parallel to the substrate, the lateral flow ALD apparatus comprising:
a substrate support supporting the substrate; a reactor cover contacting the substrate support to define a reaction chamber; a first gas flow control plate located between the reactor cover and the substrate support; a second gas flow control plate located between the reactor cover and the substrate support, and below the first gas flow control plate; a first gas inlet connected to a first gas inflow passage and a second gas inlet connected to a second gas inflow passage; and a first gas outlet connected to a first gas outflow passage and a second gas outlet connected to a second gas outflow passage, wherein the first gas outflow passage and the second gas outflow passage are disposed between an upper surface of the first gas flow control plate and a lower surface of an inside of the reactor cover, wherein the first gas inflow passage and the second gas inflow passage are disposed between the first gas flow control plate and the second gas flow control plate.