| 发明名称 |
Modeling charge distribution on FinFET sidewalls |
| 摘要 |
A method is provided for modeling charge distribution on FinFET sidewalls for estimating variability in device performance. The method includes: inputting structure parameters and simulation parameters for a FinFET structure; identifying a semiconductor-oxide interface in the structure, the interface including a plurality of atomic steps and a plurality of trapped charges; distributing charges at the interface; and performing device simulations and current-voltage analysis upon generating all samples of given number of devices. |
| 申请公布号 |
US9064976(B1) |
申请公布日期 |
2015.06.23 |
| 申请号 |
US201414557578 |
申请日期 |
2014.12.02 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Agarwal Samarth;Bajaj Mohit;Hook Terence B. |
| 分类号 |
H01L21/302;H01L21/324;H01L21/84;H01L27/12 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
Xu Fusheng |
| 主权项 |
1. A method of modeling charge distribution associated with steps on FinFET sidewalls for estimating variability in device performance, comprising:
inputting structure parameters and simulation parameters for a FinFET structure; identifying a semiconductor-oxide interface of the FinFET structure, the interface including a plurality of atomic steps and a plurality of trapped charges; distributing charges at the semiconductor-oxide interface; and performing device simulation and current-voltage analysis upon generating samples of a given number of devices. |
| 地址 |
Armonk NY US |
