发明名称 |
Zinc oxide-based thin film transistor biosensors with high sensitivity and selectivity |
摘要 |
This application discloses ZnO film transistor-based immunosensors (ZnO-bioTFT), 2T biosensor arrays formed from two integrated ZnO-bioTFTs, 1T1R-based nonvolatile memory (NVM) arrays formed from ZnO-bioTFT (T) integrated with ZnO-based resistive switches (R), as well as integrated bioTFT (IBTFT) sensor systems formed from 2T biosensor arrays and 1T1R NVM arrays. Through biofunctionalization, these biosensors can perform immunosensing with high sensitivity and selectivity, and therefore have a wide range of applications, for example, in detecting target biomolecules or small molecules, and potential application in cancer diagnosis and treatment. |
申请公布号 |
US9064965(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201313776703 |
申请日期 |
2013.02.25 |
申请人 |
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY |
发明人 |
Lu Yicheng;Reyes Pavel Ivanoff;Lee Ki-Bum;Solanki Aniruddh;Ku Chieh-Jen |
分类号 |
H01L29/786;G01N27/414 |
主分类号 |
H01L29/786 |
代理机构 |
Fox Rothschild LLP |
代理人 |
Fox Rothschild LLP |
主权项 |
1. A zinc oxide-based thin film transistor biosensor (ZnO-bioTFT sensor), comprising a ZnO-based thin film transistor (TFT) built on a substrate, wherein said ZnO-TFT has a bottom-gate TFT configuration, said bottom-gate TFT comprising an exposed top channel layer made of a ZnO-based material, said ZnO-based material comprising an undoped or doped MgxZn1-x O (MZO) film, and wherein said exposed top channel layer is biofunctionalized with a linker layer comprising at least one ligand having an affinity for a biomarker. |
地址 |
New Brunswick NJ US |