Integrated circuits including epitaxially grown strain-inducing fills doped with boron for improved robustness from delimination and methods for fabricating the same

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure. An EPI strain-inducing fill is deposited into the cavity. The EPI strain-inducing fill includes a main SiGe layer and a Si cap that overlies the main SiGe layer. The EPI strain-inducing fill is doped with boron and has a first peak boron content in an upper portion of the EPI strain-inducing fill of about 2.5 times or greater than an average boron content in an intermediate portion of the main SiGe layer.

主权项

1. An integrated circuit comprising:
a silicon-containing semiconductor region; a channel region formed in the silicon-containing semiconductor region; a gate electrode structure formed above the channel region; source and drain regions formed in the silicon-containing semiconductor region adjacent to the channel region, wherein the source and drain regions comprise an EPI strain-inducing fill that comprises a main SiGe layer and a Si cap that overlies the main SiGe layer, and wherein the EPI strain-inducing fill is doped with boron and has a first peak boron content in an upper portion of the EPI strain-inducing fill of about 2.5 times or greater than an average boron content in an intermediate portion of the main SiGe layer; and a metal silicide formed in the EPI strain-inducing fill and at least partially in the source and drain regions, wherein the EPI strain-inducing fill has hydrogen concentrated therein to define the EPI strain-inducing fill as a hydrogen agglomerated EPI strain-inducing fill, wherein the hydrogen agglomerated EPI strain-inducing fill has a peak hydrogen content in the upper portion of the hydrogen agglomerated EPI strain-inducing fill of about 10 times or greater than an average hydrogen content in the intermediate portion of the main SiGe layer.