发明名称 Semiconductor module and a method for fabrication thereof by extended embedding technologies
摘要 The semiconductor module includes a carrier, a plurality of semiconductor transistor chips disposed on the carrier, a plurality of semiconductor diode chips disposed on the carrier, an encapsulation layer disposed above the semiconductor transistor chips and the semiconductor diode chips, and a metallization layer disposed above the encapsulation layer. The metallization layer includes a plurality of metallic areas forming electrical connections between selected ones of the semiconductor transistor chips and the semiconductor diode chips.
申请公布号 US9064869(B2) 申请公布日期 2015.06.23
申请号 US201313974583 申请日期 2013.08.23
申请人 Infineon Technologies AG 发明人 Hoegerl Juergen;Fuergut Edward;Beer Gottfried;Hohlfeld Olaf
分类号 H01L23/18;H01L21/60;H01L23/522;H01L23/00;H01L23/28;H01L23/31;H01L23/485;H01L25/18;H01L27/12 主分类号 H01L23/18
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. A semiconductor module, comprising: a contiguous carrier comprising an upper surface, a lower surface and side faces connecting the upper surface to the lower surface; a plurality of semiconductor chips disposed on the contiguous carrier; an encapsulation layer disposed above the semiconductor chips, the encapsulation layer covering the upper surface and the side faces of the contiguous carrier; and a metallization layer disposed above the encapsulation layer, the metallization layer comprising a plurality of metallic areas forming electrical connections between selected ones of the semiconductor chips.
地址 Neubiberg DE