发明名称 |
Semiconductor module and a method for fabrication thereof by extended embedding technologies |
摘要 |
The semiconductor module includes a carrier, a plurality of semiconductor transistor chips disposed on the carrier, a plurality of semiconductor diode chips disposed on the carrier, an encapsulation layer disposed above the semiconductor transistor chips and the semiconductor diode chips, and a metallization layer disposed above the encapsulation layer. The metallization layer includes a plurality of metallic areas forming electrical connections between selected ones of the semiconductor transistor chips and the semiconductor diode chips. |
申请公布号 |
US9064869(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201313974583 |
申请日期 |
2013.08.23 |
申请人 |
Infineon Technologies AG |
发明人 |
Hoegerl Juergen;Fuergut Edward;Beer Gottfried;Hohlfeld Olaf |
分类号 |
H01L23/18;H01L21/60;H01L23/522;H01L23/00;H01L23/28;H01L23/31;H01L23/485;H01L25/18;H01L27/12 |
主分类号 |
H01L23/18 |
代理机构 |
Murphy, Bilak & Homiller, PLLC |
代理人 |
Murphy, Bilak & Homiller, PLLC |
主权项 |
1. A semiconductor module, comprising:
a contiguous carrier comprising an upper surface, a lower surface and side faces connecting the upper surface to the lower surface; a plurality of semiconductor chips disposed on the contiguous carrier; an encapsulation layer disposed above the semiconductor chips, the encapsulation layer covering the upper surface and the side faces of the contiguous carrier; and a metallization layer disposed above the encapsulation layer, the metallization layer comprising a plurality of metallic areas forming electrical connections between selected ones of the semiconductor chips. |
地址 |
Neubiberg DE |