Semiconductor device and method for manufacturing same

摘要

Disclosed is a semiconductor device provided with: lower-layer wiring formed on a substrate, an interlayer insulating film covering the lower-layer wiring, and a first upper-layer wiring line (18b) and a second upper-layer wiring line (18c) arranged on the interlayer insulating film and intersecting with the lower-layer wiring, and a level-difference adjustment protrusion is provided between the first upper-layer wiring line (18b) and the second upper-layer wiring line (18c) adjacent to a side section of the lower-layer wiring.

主权项

1. A semiconductor device, comprising:
a lower-layer wiring line formed on a substrate; an interlayer insulating film covering the lower-layer wiring line; a first upper-layer wiring line and a second upper-layer wiring line arranged on the interlayer insulating film so as to intersect the lower-layer wiring line; and a level-difference adjustment island-disposed between the first upper-layer wiring line and the second upper-layer wiring line adjacent to a side of the lower-layer wiring line, wherein the level-difference adjustment island includes a first level-difference adjustment island and a second level-difference adjustment island that is formed so as to overlap the first level-difference adjustment island on a side closer to the lower-layer wiring line.