Dry-etch for selective oxidation removal

摘要

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

主权项

1. A method of etching a substrate in a substrate processing region of a substrate processing chamber, wherein the substrate has exposed tungsten oxide and exposed tungsten (W), the method comprising:
flowing a fluorine-containing precursor and hydrogen (H2) into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents; and etching the tungsten oxide from the substrate by flowing the plasma effluents into the substrate processing region through through-holes in a showerhead, wherein an etch rate ratio of tungsten oxide to tungsten is greater than or about 10:1.