Semiconductor structure having metal gate and manufacturing method thereof

摘要

A manufacturing method for a semiconductor device first provides a substrate having at least a first transistor formed thereon. The first transistor includes a first conductivity type. The first transistor further includes a first metal gate and a protecting layer covering sidewalls of the first metal gate. A portion of the first metal gate is removed to form a first recess and followed by removing a portion of the protecting layer to form a second recess. Then, an etch stop layer is formed in the second recess.

主权项

1. A semiconductor device comprising:
a substrate; a transistor formed on the substrate, the transistor comprising a metal gate; an etch stop layer formed on a top of the metal gate, a width of the etch stop layer being larger than a width of the metal gate; and an interlayer dielectric (ILD) layer surrounding the transistor, a top of the etch stop layer and a top of the ILD layer being coplanar.