Trench patterning with block first sidewall image transfer

摘要

A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.

主权项

1. A method comprising:
forming a tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer; defining a pattern region in the second hardmask layer; forming an interconnect pattern and an alignment mark pattern above the tetra-layer hardmask; and transferring the interconnect pattern and the alignment mark pattern into a substrate below the tetra-layer hardmask, wherein the interconnect pattern and the alignment mark pattern are transferred into the substrate only in the pattern region defined by the second hardmask layer.