Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same

摘要

Transistor devices having a self-aligned gate structure on transparent substrates and techniques for fabrication thereof are provided. In one aspect, a method of fabricating a transistor device includes the following steps. A channel material is formed on a transparent substrate. Source and drain electrodes are formed in contact with the channel material. A dielectric layer is deposited on the channel material. A photoresist is deposited on the dielectric layer and developed using UV light exposure through the transparent substrate. A gate metal(s) is deposited on the exposed portions of the dielectric layer and the undeveloped portions of the photoresist. The undeveloped portions of the photoresist are removed along with portions of the gate metal over the source and drain regions to form a gate of the device on the dielectric layer over the channel material which is self-aligned to the source and drain electrodes.

主权项

1. A transistor device, comprising:
a transparent substrate; a channel material on the substrate; source and drain electrodes over, and in contact with, the channel material; a dielectric layer on the channel material and on the source and drain electrodes; and a gate on the dielectric layer over the channel material which is self-aligned to the source and drain electrodes, wherein the gate is present between the source and drain electrodes, wherein portions of gate metal remain present on outer sides of the source and drain electrodes and are separated from the source and drain electrodes by the dielectric layer, such that top surfaces of the source and drain electrodes are accessible, and wherein the gate and the portions of the gate metal on the outer sides of the source and drain electrodes are separated by a gap present over the top surfaces of the source and drain electrodes.